Invention Grant
US08115315B2 Semiconductor chips having redistributed power/ground lines directly connected to power/ground lines of internal circuits and methods of fabricating the same 有权
具有直接连接到内部电路的电源/接地线的重新分配的电源/接地线的半导体芯片及其制造方法

  • Patent Title: Semiconductor chips having redistributed power/ground lines directly connected to power/ground lines of internal circuits and methods of fabricating the same
  • Patent Title (中): 具有直接连接到内部电路的电源/接地线的重新分配的电源/接地线的半导体芯片及其制造方法
  • Application No.: US12431956
    Application Date: 2009-04-29
  • Publication No.: US08115315B2
    Publication Date: 2012-02-14
  • Inventor: Jong-Joo Lee
  • Applicant: Jong-Joo Lee
  • Applicant Address: KR Suwon-si, Gyeonggi-do
  • Assignee: Samsung Electronics Co., Ltd.
  • Current Assignee: Samsung Electronics Co., Ltd.
  • Current Assignee Address: KR Suwon-si, Gyeonggi-do
  • Agency: Volentine & Whitt, PLLC
  • Priority: KR2005-002787 20050318
  • Main IPC: H01L23/48
  • IPC: H01L23/48
Semiconductor chips having redistributed power/ground lines directly connected to power/ground lines of internal circuits and methods of fabricating the same
Abstract:
Provided are embodiments of semiconductor chips having a redistributed metal interconnection directly connected to power/ground lines of an internal circuit are provided. Embodiments of the semiconductor chips include an internal circuit formed on a semiconductor substrate. A chip pad is disposed on the semiconductor substrate. The chip pad is electrically connected to the internal circuit through an internal interconnection. A passivation layer is provided over the chip pad. A redistributed metal interconnection is provided on the passivation layer. The redistributed metal interconnection directly connects the internal interconnection to the chip pad through a via-hole and a chip pad opening, which penetrate at least the passivation layer. Methods of fabricating the semiconductor chip are also provided.
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