Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13211806Application Date: 2011-08-17
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Publication No.: US08115554B2Publication Date: 2012-02-14
- Inventor: Choon Young Ng , Kazutaka Takagi , Naotaka Tomita
- Applicant: Choon Young Ng , Kazutaka Takagi , Naotaka Tomita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-174003 20090727
- Main IPC: H03F3/68
- IPC: H03F3/68

Abstract:
According to one embodiment, there is a semiconductor device including a first active element, a second active element connected in parallel with the first active element, and a first stabilization circuit connected between a gate of the first active element and a gate of the second active element and configured with a parallel circuit of a gate bypass resistor, a gate bypass capacitor, and a gate bypass inductor, the first stabilization circuit having a resonant frequency equal to an odd mode resonant frequency.
Public/Granted literature
- US20110298552A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-12-08
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