Invention Grant
US08117986B2 Apparatus for an improved deposition shield in a plasma processing system
有权
用于等离子体处理系统中改进的沉积屏蔽的装置
- Patent Title: Apparatus for an improved deposition shield in a plasma processing system
- Patent Title (中): 用于等离子体处理系统中改进的沉积屏蔽的装置
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Application No.: US11581000Application Date: 2006-10-16
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Publication No.: US08117986B2Publication Date: 2012-02-21
- Inventor: Hidehito Saigusa , Taira Takase , Kouji Mitsuhashi , Hiroyuki Nakayama
- Applicant: Hidehito Saigusa , Taira Takase , Kouji Mitsuhashi , Hiroyuki Nakayama
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: C23C16/00
- IPC: C23C16/00
Abstract:
The present invention presents an improved deposition shield for surrounding a process space in a plasma processing system, wherein the design and fabrication of the deposition shield advantageously provides for a clean processing plasma in the process space with substantially minimal erosion of the deposition shield.
Public/Granted literature
- US20070028839A1 Method and apparatus for an improved deposition shield in a plasma processing system Public/Granted day:2007-02-08
Information query
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