Invention Grant
US08118936B2 Method and apparatus for an improved baffle plate in a plasma processing system
有权
等离子体处理系统中改进挡板的方法和装置
- Patent Title: Method and apparatus for an improved baffle plate in a plasma processing system
- Patent Title (中): 等离子体处理系统中改进挡板的方法和装置
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Application No.: US11620334Application Date: 2007-01-05
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Publication No.: US08118936B2Publication Date: 2012-02-21
- Inventor: Hidehito Saigusa , Taira Takase , Kouji Mitsuhashi , Hiroyuki Nakayama
- Applicant: Hidehito Saigusa , Taira Takase , Kouji Mitsuhashi , Hiroyuki Nakayama
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C23C16/00 ; C23C14/00
Abstract:
The present invention presents an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously provides for a uniform processing plasma in the process space with substantially minimal erosion of the baffle plate.
Public/Granted literature
- US20070107846A1 METHOD AND APPARATUS FOR AN IMPROVED BAFFLE PLATE IN A PLASMA PROCESSING SYSTEM Public/Granted day:2007-05-17
Information query
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