Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
-
Application No.: US11187864Application Date: 2005-07-25
-
Publication No.: US08119050B2Publication Date: 2012-02-21
- Inventor: Bunshi Kuratomi , Takafumi Nishita , Youichi Kawata
- Applicant: Bunshi Kuratomi , Takafumi Nishita , Youichi Kawata
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2004-252108 20040831
- Main IPC: B29C70/70
- IPC: B29C70/70

Abstract:
Improvement in the yield of a semiconductor device is aimed at. When extruding a molded body with the ejector pin which performs advance-or-retreat movement at the projecting portion which projects from this bottom face in the bottom face of a mold cavity corresponding to the surface and the mounting side of a molded body after forming a molded body, depressed portions being formed in the surface and the mounting side by projecting portions, they can extrude. When accumulating molded bodies themselves in the baking step after a resin molding step and performing bake, by arranging the resin burr which furthermore withdrew from the surface and the mounting side in the depressed portion, bake can be performed in the condition that the accumulated molded bodies are stuck. Therefore, the form of deformation of a warp etc. of each molded body or a lead frame, can be made uniform, and, as a result, improvement in the yield of QFP (semiconductor device) is aimed at.
Public/Granted literature
- US20060043641A1 Method of manufacturing a semiconductor device Public/Granted day:2006-03-02
Information query