Invention Grant
- Patent Title: Methods of manufacturing semiconductor devices having a recessed-channel
- Patent Title (中): 制造具有凹槽的半导体器件的方法
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Application No.: US12984176Application Date: 2011-01-04
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Publication No.: US08119486B2Publication Date: 2012-02-21
- Inventor: Young-Pil Kim , Eun-Ae Chung , Gab-Jin Nam , Hee-Don Hwang , Ji-Young Min
- Applicant: Young-Pil Kim , Eun-Ae Chung , Gab-Jin Nam , Hee-Don Hwang , Ji-Young Min
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0013901 20100216
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
A method according to example embodiments includes forming isolation regions in a substrate, the isolation regions defining active regions. Desired regions of the active regions and the isolation regions are removed, thereby forming recess channel trenches to a desired depth. The recess channel trenches are fog to have a first region in contact with the active regions and a second region in contact with the isolation regions. A width of a bottom surface of the recess channel trenches is less than that of a top surface thereof. The active regions and the isolation regions are annealed to uplift the bottom surface of the recess channel trenches. An area of the bottom surface of the first region is increased. A depth of the bottom surface of the first region is reduced.
Public/Granted literature
- US20110201168A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES HAVING A RECESSED-CHANNEL Public/Granted day:2011-08-18
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