Invention Grant
- Patent Title: Method of forming a stressed passivation film using a microwave-assisted oxidation process
- Patent Title (中): 使用微波辅助氧化工艺形成应力钝化膜的方法
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Application No.: US12058585Application Date: 2008-03-28
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Publication No.: US08119540B2Publication Date: 2012-02-21
- Inventor: Robert D Clark
- Applicant: Robert D Clark
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L21/34
- IPC: H01L21/34 ; H01L21/469 ; H01L21/00
Abstract:
A method for forming a stressed passivation film. In one embodiment, the method includes depositing a silicon nitride film over an integrated circuit structure on a substrate and embedding oxygen into a surface of the silicon nitride film by exposing the silicon nitride film to a process gas containing an oxygen-containing or an oxygen- and nitrogen-containing gas excited by plasma induced dissociation based on microwave irradiation via a plane antenna member having a plurality of slots, wherein the plane antenna member faces the substrate surface containing the silicon nitride film. The method further includes heat-treating the oxygen-embedded silicon nitride film to form a stressed silicon oxynitride film.
Public/Granted literature
- US20090246974A1 METHOD OF FORMING A STRESSED PASSIVATION FILM USING A MICROWAVE-ASSISTED OXIDATION PROCESS Public/Granted day:2009-10-01
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