Invention Grant
US08120007B2 Phase-change memory device, phase-change channel transistor and memory cell array
有权
相变存储器件，相变沟道晶体管和存储单元阵列
- Patent Title: Phase-change memory device, phase-change channel transistor and memory cell array
- Patent Title (中): 相变存储器件，相变沟道晶体管和存储单元阵列
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Application No.: US12929610Application Date: 2011-02-03
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Publication No.: US08120007B2Publication Date: 2012-02-21
- Inventor: Sumio Hosaka , Hayato Sone , Masaki Yoshimaru , Takashi Ono , Mayumi Nakasato
- Applicant: Sumio Hosaka , Hayato Sone , Masaki Yoshimaru , Takashi Ono , Mayumi Nakasato
- Applicant Address: JP Yokohama
- Assignee: Semiconductor Technology Academic Research Center
- Current Assignee: Semiconductor Technology Academic Research Center
- Current Assignee Address: JP Yokohama
- Priority: JP2006-211262 20060802
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
A phase-change channel transistor includes a first electrode; a second electrode; a memory layer provided between the first and second electrodes; and a third electrode provided for the memory layer with an insulating film interposed therebetween, wherein the memory layer includes at least a first layer formed from a phase-change material which is stable in either an amorphous phase or a crystalline phase at room temperature and a second layer formed from a resistive material, and wherein the resistance value of the second layer is smaller than the resistance value of the first layer in the amorphous phase, but is larger than the resistance value of the first layer in the crystalline phase.
Public/Granted literature
- US20110127486A1 Phase-change memory device, phase-change channel transistor and memory cell array Public/Granted day:2011-06-02
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