Invention Grant
- Patent Title: Resonant structure comprising wire and resonant tunneling transistor
- Patent Title (中): 谐振结构包括有线和谐振隧穿晶体管
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Application No.: US12357681Application Date: 2009-01-22
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Publication No.: US08120015B2Publication Date: 2012-02-21
- Inventor: Yun-Kwon Park , Sung-Woo Hwang , Jea-Shik Shin , Byeoung-Ju Ha , Jae-Sung Rieh , In-Sang Song , Yong-Kyu Kim , Byeong-Kwon Ju , Hee-Tae Kim
- Applicant: Yun-Kwon Park , Sung-Woo Hwang , Jea-Shik Shin , Byeoung-Ju Ha , Jae-Sung Rieh , In-Sang Song , Yong-Kyu Kim , Byeong-Kwon Ju , Hee-Tae Kim
- Applicant Address: KR Suwon-si KR Seoul
- Assignee: Samsung Electronics Co., Ltd.,Korea University Industrial and Academic Collaboration Foundation
- Current Assignee: Samsung Electronics Co., Ltd.,Korea University Industrial and Academic Collaboration Foundation
- Current Assignee Address: KR Suwon-si KR Seoul
- Agency: NSIP Law
- Priority: KR10-2008-0007186 20080123
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
A resonant structure is provided, including a first terminal, a second terminal which faces the first terminal, a wire unit which connects the first terminal and the second terminal, a third terminal which is spaced apart at a certain distance from the wire unit and which resonates the wire unit, and a potential barrier unit which is formed on the wire unit and which provides a negative resistance component. Accordingly, transduction efficiency can be enhanced.
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