Invention Grant
- Patent Title: Active device array substrate and fabrication method thereof
- Patent Title (中): 有源器件阵列基板及其制造方法
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Application No.: US12242932Application Date: 2008-10-01
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Publication No.: US08120032B2Publication Date: 2012-02-21
- Inventor: Shih-Chin Chen , Wen-Chuan Wang
- Applicant: Shih-Chin Chen , Wen-Chuan Wang
- Applicant Address: TW Taoyuan
- Assignee: Chunghwa Picture Tubes, Ltd.
- Current Assignee: Chunghwa Picture Tubes, Ltd.
- Current Assignee Address: TW Taoyuan
- Agency: Jianq Chyun IP Office
- Priority: TW97106985A 20080229
- Main IPC: H01L27/12
- IPC: H01L27/12

Abstract:
A fabrication method of an active device array substrate is disclosed. A first metal material layer, a gate insulation material layer, a channel material layer, a second metal material layer, and a first photoresist layer are formed over a substrate sequentially. The first photoresist layer is patterned with a multi-tone mask to form a first patterned photoresist layer with two thicknesses. A first and second removing processes are performed sequentially using the first patterned photoresist layer as a mask to form a gate, a gate insulation layer, a channel layer, and a source/drain. The first patterned photoresist layer is removed. A passivation layer and a second patterned photoresist layer are formed over the substrate. A third removing process is performed to form a plurality of contact holes. A pixel electrode material layer is formed over the substrate. The second patterned photoresist layer is lifted off to form a pixel electrode.
Public/Granted literature
- US20090218571A1 ACTIVE DEVICE ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF Public/Granted day:2009-09-03
Information query
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