Invention Grant
US08120066B2 Single voltage supply pseudomorphic high electron mobility transistor (PHEMT) power device and process for manufacturing the same
有权
单电源供应伪电容高电子迁移率晶体管（PHEMT）功率器件及其制造方法
- Patent Title: Single voltage supply pseudomorphic high electron mobility transistor (PHEMT) power device and process for manufacturing the same
- Patent Title (中): 单电源供应伪电容高电子迁移率晶体管（PHEMT）功率器件及其制造方法
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Application No.: US12444383Application Date: 2006-10-04
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Publication No.: US08120066B2Publication Date: 2012-02-21
- Inventor: Claudio Lanzieri , Simone Lavanga , Marco Peroni , Antonio Cetronio
- Applicant: Claudio Lanzieri , Simone Lavanga , Marco Peroni , Antonio Cetronio
- Applicant Address: IT
- Assignee: Selex Sistemi Integrati S.p.A.
- Current Assignee: Selex Sistemi Integrati S.p.A.
- Current Assignee Address: IT
- Agency: The Belles Group, P.C.
- International Application: PCT/IT2006/000705 WO 20061004
- International Announcement: WO2008/041249 WO 20080410
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
Disclosed herein is a pseudomorphic high electron mobility transistor (PHEMT) power device (1) including a semi-insulating substrate (2); an epitaxial substrate (3) formed on the semi-insulating substrate (2) a contact layer (19). The contact layer (19) includes a lightly doped contact layer (20) formed on the Schottky layer (18), and a highly doped contact layer (21) formed on the lightly doped contact layer (20) and having a doping concentration higher than the lightly doped contact layer (20). The PHEMT power device (1) further includes a—wide recess (23) formed to penetrate the highly doped contact layer (21) and a narrow recess (24) formed in the wide recess (23) to penetrate the lightly doped contact layer (20). The gate electrode (6) is formed in the narrow recess (24) and in Schottky contact with the Schottky layer (18).
Public/Granted literature
Information query
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