Invention Grant
- Patent Title: Solid-state imaging device and method for manufacturing same
- Patent Title (中): 固态成像装置及其制造方法
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Application No.: US12557014Application Date: 2009-09-10
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Publication No.: US08120081B2Publication Date: 2012-02-21
- Inventor: Atsushi Murakoshi
- Applicant: Atsushi Murakoshi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-071038 20090323
- Main IPC: H01L31/0328
- IPC: H01L31/0328

Abstract:
In a back-illuminated solid-state imaging device, a multilayer interconnect layer, a semiconductor substrate, a plurality of color filters, and a plurality of microlenses are provided in this order. A p-type region is formed so as to partition a lower portion of the semiconductor substrate into a plurality of regions, and an insulating member illustratively made of BSG is buried immediately above the p-type region. PD regions are isolated from each other by the p-type region and the insulating member. Moreover, a high-concentration region is formed in a lower portion of the PD region, and an upper portion is served as a low-concentration region.
Public/Granted literature
- US20100237451A1 SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2010-09-23
Information query
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