Invention Grant
- Patent Title: Low dose super deep source/drain implant
- Patent Title (中): 低剂量超深源/漏植入
-
Application No.: US10896711Application Date: 2004-07-22
-
Publication No.: US08120109B2Publication Date: 2012-02-21
- Inventor: Zhongze Wang , Inna V. Patrick
- Applicant: Zhongze Wang , Inna V. Patrick
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A semiconductor device for reducing junction capacitance by an additional low dose super deep source/drain implant and a method for its fabrication are disclosed. In particular, the super deep implant is performed after spacer formation to significantly reduce junction capacitance in the channel region.
Public/Granted literature
- US20050003598A1 Low dose super deep source/drain implant Public/Granted day:2005-01-06
Information query
IPC分类:
