Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12441165Application Date: 2007-09-13
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Publication No.: US08120121B2Publication Date: 2012-02-21
- Inventor: John Nigel Ellis , Piet De Pauw
- Applicant: John Nigel Ellis , Piet De Pauw
- Applicant Address: DE BE
- Assignee: X-Fab Semiconductor Foundries AG,Melexis Tessenderlo N.V.
- Current Assignee: X-Fab Semiconductor Foundries AG,Melexis Tessenderlo N.V.
- Current Assignee Address: DE BE
- Agency: Thompson Hine LLP
- Priority: GB0617958.4 20060913
- International Application: PCT/GB2007/050541 WO 20070913
- International Announcement: WO2008/065441 WO 20080605
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L31/102 ; H01L21/70
Abstract:
A semiconductor device including a first transistor in a substrate, a second transistor in the substrate, and a further device in the substrate. The second transistor and the further device are arranged to operate at a second voltage which is higher than a first voltage. The first voltage is the (normal) voltage of operation of the first transistor, and the first transistor is isolated from the second voltage.
Public/Granted literature
- US20100019343A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-01-28
Information query
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