Invention Grant
- Patent Title: Magnetic tunnel junction device and fabrication
- Patent Title (中): 磁隧道连接装置及制造
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Application No.: US12396359Application Date: 2009-03-02
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Publication No.: US08120126B2Publication Date: 2012-02-21
- Inventor: Kangho Lee , Xiaochun Zhu , Xia Li , Seung H. Kang
- Applicant: Kangho Lee , Xiaochun Zhu , Xia Li , Seung H. Kang
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalatsky; Nicholas J. Pauley; Jonathan T. Velasco
- Main IPC: H01L29/82
- IPC: H01L29/82 ; G11C11/02
Abstract:
A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, the method includes depositing a capping material on a free layer of a magnetic tunneling junction structure to form the capping layer and oxidizing a portion of the capping material to form a layer of oxidized material.
Public/Granted literature
- US20100219491A1 Magnetic Tunnel Junction Device and Fabrication Public/Granted day:2010-09-02
Information query
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