Invention Grant
- Patent Title: Power transducer
- Patent Title (中): 功率传感器
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Application No.: US12370087Application Date: 2009-02-12
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Publication No.: US08120294B2Publication Date: 2012-02-21
- Inventor: Satoshi Ibori , Yoshihiro Uchino , Hiroshi Watanabe , Masahiro Hiraga
- Applicant: Satoshi Ibori , Yoshihiro Uchino , Hiroshi Watanabe , Masahiro Hiraga
- Applicant Address: JP Tokyo
- Assignee: Hitachi Industrial Equipment Systems Co., Ltd.
- Current Assignee: Hitachi Industrial Equipment Systems Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2008-058918 20080310
- Main IPC: H02P3/00
- IPC: H02P3/00

Abstract:
The performance of a power transducer is improved while efficiently using a power semiconductor also by managing the permissible duty factor of the power semiconductor in the regenerative braking circuit provided in the power transducer. The user is allowed to set, through an operation panel provided on the power transducer, the resistance value of the regenerative braking resistor for thermally consuming the rotational energy generated during motor deceleration. The power transducer performs the steps of: calculating the current which flows in the regenerative braking circuit from the resistance value setting; obtaining the generation loss of the power semiconductor in the regenerative braking circuit with the calculated current value; and determining the permissible duty factor of the power semiconductor from the obtained generation loss.
Public/Granted literature
- US20090224704A1 POWER TRANSDUCER Public/Granted day:2009-09-10
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