Invention Grant
- Patent Title: Circuit structure free from test effect and testing method thereof
- Patent Title (中): 电路结构无试验效果及试验方法
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Application No.: US12604375Application Date: 2009-10-22
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Publication No.: US08120421B2Publication Date: 2012-02-21
- Inventor: Ju-Lin Huang
- Applicant: Ju-Lin Huang
- Applicant Address: TW Hsinchu
- Assignee: Novatek Microelectronics Corp.
- Current Assignee: Novatek Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW98128057A 20090820
- Main IPC: G01R19/00
- IPC: G01R19/00

Abstract:
A circuit structure free from test effect is provided. The circuit structure includes a first test terminal and a second test terminal. A symmetric circuit unit is coupled between the first test terminal and the second test terminal. The symmetric circuit unit includes a plurality of transistors, wherein the transistors are symmetrically disposed to form a first part circuit and a second part circuit. A switch control unit alternatively connects the transistors of the first part circuit and the transistors of the second part circuit between the first test terminal and the second test terminal according to a control signal.
Public/Granted literature
- US20110043216A1 CIRCUIT STRUCTURE FREE FROM TEST EFFECT AND TESTING METHOD THEREOF Public/Granted day:2011-02-24
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