Invention Grant
- Patent Title: Line structure and method for manufacturing the same
- Patent Title (中): 线结构及其制造方法
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Application No.: US12042402Application Date: 2008-03-05
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Publication No.: US08120534B2Publication Date: 2012-02-21
- Inventor: Eun-seok Park , Jeong-hae Lee , Young-eil Kim , Jong-seok Kim , Ick-jae Yoon , Young-ho Ryu , Jae-hyun Park
- Applicant: Eun-seok Park , Jeong-hae Lee , Young-eil Kim , Jong-seok Kim , Ick-jae Yoon , Young-ho Ryu , Jae-hyun Park
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2007-0107438 20071024
- Main IPC: H01Q1/38
- IPC: H01Q1/38
Abstract:
A line structure is provided which includes a ferroelectric film which is formed on at least one surface of both sides of a substrate and a permittivity of which changes according to a magnitude of an applied voltage, an inductor which is formed on a first side of the substrate, and a capacitor which has a capacitance corresponding to the permittivity of the ferroelectric film and the substrate.
Public/Granted literature
- US20090108966A1 LINE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2009-04-30
Information query
