Invention Grant
- Patent Title: Interconnect structure with stress buffering ability and the manufacturing method thereof
- Patent Title (中): 具有应力缓冲能力的互连结构及其制造方法
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Application No.: US12170272Application Date: 2008-07-09
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Publication No.: US08123965B2Publication Date: 2012-02-28
- Inventor: Yung-Yu Hsu , Shyi-Ching Liau , Ra-Min Tain , Jr-Yuan Jeng
- Applicant: Yung-Yu Hsu , Shyi-Ching Liau , Ra-Min Tain , Jr-Yuan Jeng
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: TW95111380A 20060331
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C25F3/00 ; C03C25/68

Abstract:
An interconnect structure with stress buffering ability is disclosed, which comprises: a first surface, connected to a device selected form the group consisting of a substrate and an electronic device; a second surface, connected to a device selected form the group consisting of the substrate and the electronic device; a supporting part, sandwiched between and interconnecting the first and the second surfaces while enabling the areas of the two ends of the supporting part to be small than those of the first and the second surfaces in respective; and a buffer, arranged surrounding the supporting part for absorbing and buffering stresses.
Public/Granted literature
- US20080264899A1 INTERCONNECT STRUCTURE WITH STRESS BUFFERING ABILITY AND THE MANUFACTURING METHOD THEREOF Public/Granted day:2008-10-30
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