A novel method for forming a pattern capable of decreasing the number of steps in a double patterning process, and a material for forming a coating film suitably used in the method for forming a pattern are provided. First resist film (2) is formed by applying a first chemically amplified resist composition on support (1), and thus formed film is selectively exposed, and developed to form multiple first resist patterns (3). Next, on the surface of the first resist patterns (3) are formed multiple coating patterns (5) by forming coating films (4) constituted with a water soluble resin film, respectively. Furthermore, a second chemically amplified resist composition is applied on the support (1) having the coating pattern (5) formed thereon to form second resist film (6), which is selectively exposed and developed to form multiple second resist patterns (7). Accordingly, a pattern including the coating patterns (5) and the second resist patterns (7) is formed on the support (1).