Method of forming an interconnect joint

Invention Grant

US08124517B2 Method of forming an interconnect joint 有权

Title translation: 形成互连接头的方法

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Patent Title: Method of forming an interconnect joint
Patent Title (中): 形成互连接头的方法
Application No.: US12837574

Application Date: 2010-07-16
Publication No.: US08124517B2

Publication Date: 2012-02-28
Inventor: Lakshmi Supriya , Daewoong Suh
Applicant: Lakshmi Supriya , Daewoong Suh
Applicant Address: US CA Santa Clara
Assignee: Intel Corporation
Current Assignee: Intel Corporation
Current Assignee Address: US CA Santa Clara
Agent Kenneth A. Nelson
Main IPC: H01L21/44
IPC: H01L21/44

Abstract:

A method of forming an interconnect joint includes providing a first metal layer (210, 310), providing a film (220, 320) including metal particles (221, 321) and organic molecules (222, 322), placing the film over the first metal layer, placing a second metal layer (230, 330) over the film, and sintering the metal particles such that the organic molecules degrade and the first metal layer and the second metal layer are joined together.

Abstract(Chinese):

形成互连接头的方法包括提供第一金属层（210,310），提供包括金属颗粒（221,321）和有机分子（222,322）的膜（220,320），将膜放置在第一金属层，在膜上放置第二金属层（230,330），并烧结金属颗粒使得有机分子降解，并且第一金属层和第二金属层接合在一起。

Public/Granted literature

US20100276474A1 METHOD OF FORMING AN INTERCONNECT JOINT Public/Granted day:2010-11-04

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/44	....用H01L21/36至H01L21/428各组不包含的方法或设备在半导体材料上制造电极的