Invention Grant
US08124957B2 Low resistance tunnel junctions in wide band gap materials and method of making same 有权
宽带隙材料中的低电阻隧道结及其制造方法

Low resistance tunnel junctions in wide band gap materials and method of making same
Abstract:
A low resistance tunnel junction that uses a natural polarization dipole associated with dissimilar materials to align a conduction band to a valence band is disclosed. Aligning the conduction band to the valence band of the junction encourages tunneling across the junction. The tunneling is encouraged, because the dipole space charge bends the energy bands, and shortens a tunnel junction width charge carriers must traverse to tunnel across the junction. Placing impurities within or near the tunnel junction that may form deep states in the junction may also encourage tunneling in a tunnel junction. These states shorten the distance charge carriers must traverse across the tunnel junction.
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