Invention Grant
- Patent Title: Low resistance tunnel junctions in wide band gap materials and method of making same
- Patent Title (中): 宽带隙材料中的低电阻隧道结及其制造方法
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Application No.: US11360166Application Date: 2006-02-22
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Publication No.: US08124957B2Publication Date: 2012-02-28
- Inventor: James P. Ibbetson , Bernd P. Keller , Umesh K. Mishra
- Applicant: James P. Ibbetson , Bernd P. Keller , Umesh K. Mishra
- Applicant Address: US CA Goleta
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US CA Goleta
- Agency: Koppel, Patrick, Heybl & Philpott
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
A low resistance tunnel junction that uses a natural polarization dipole associated with dissimilar materials to align a conduction band to a valence band is disclosed. Aligning the conduction band to the valence band of the junction encourages tunneling across the junction. The tunneling is encouraged, because the dipole space charge bends the energy bands, and shortens a tunnel junction width charge carriers must traverse to tunnel across the junction. Placing impurities within or near the tunnel junction that may form deep states in the junction may also encourage tunneling in a tunnel junction. These states shorten the distance charge carriers must traverse across the tunnel junction.
Public/Granted literature
- US20070194300A1 Low resistance tunnel junctions in wide band gap materials and method of making same Public/Granted day:2007-08-23
Information query
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