Invention Grant
- Patent Title: Localized compressive strained semiconductor
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Application No.: US12463619Application Date: 2009-05-11
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Publication No.: US08124977B2Publication Date: 2012-02-28
- Inventor: Leonard Forbes
- Applicant: Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L31/112
- IPC: H01L31/112
Abstract:
One aspect of the present subject matter relates to a method for forming strained semiconductor film. According to an embodiment of the method, a crystalline semiconductor bridge is formed over a substrate. The bridge has a first portion bonded to the substrate, a second portion bonded to the substrate, and a middle portion between the first and second portions separated from the substrate. The middle portion of the bridge is bonded to the substrate to provide a compressed crystalline semiconductor layer on the substrate. Other aspects are provided herein.
Public/Granted literature
- US20090218566A1 LOCALIZED COMPRESSIVE STRAINED SEMICONDUCTOR Public/Granted day:2009-09-03
Information query
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