Invention Grant
- Patent Title: Rugged semiconductor device architecture
- Patent Title (中): 坚固的半导体器件架构
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Application No.: US12136140Application Date: 2008-06-10
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Publication No.: US08124981B2Publication Date: 2012-02-28
- Inventor: Christopher L. Rexer , Gary M. Dolny , Richard L. Woodin , Carl Anthony Witt , Joseph Shovlin
- Applicant: Christopher L. Rexer , Gary M. Dolny , Richard L. Woodin , Carl Anthony Witt , Joseph Shovlin
- Applicant Address: US ME South Portland
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US ME South Portland
- Agency: Hiscock & Barclay, LLP
- Main IPC: H01L29/15
- IPC: H01L29/15
Abstract:
A wide bandgap silicon carbide device has an avalanche control structure formed in an epitaxial layer of a first conductivity type above a substrate that is connected to a first electrode of the device. A first region of a second conductivity type is in the upper surface of the epitaxial layer with a connection to a second electrode of the device. A second region of the first conductivity type lies below the first region and has a dopant concentration greater than the dopant concentration in the epitaxial layer.
Public/Granted literature
- US20090302327A1 RUGGED SEMICONDUCTOR DEVICE ARCHITECTURE Public/Granted day:2009-12-10
Information query
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