Invention Grant
US08125001B2 Method for manufacturing gallium oxide based substrate, light emitting device, and method for manufacturing the light emitting device
有权
用于制造基于氧化镓的衬底的方法，发光器件以及用于制造发光器件的方法
- Patent Title: Method for manufacturing gallium oxide based substrate, light emitting device, and method for manufacturing the light emitting device
- Patent Title (中): 用于制造基于氧化镓的衬底的方法，发光器件以及用于制造发光器件的方法
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Application No.: US12620061Application Date: 2009-11-17
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Publication No.: US08125001B2Publication Date: 2012-02-28
- Inventor: Yong Tae Moon
- Applicant: Yong Tae Moon
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2008-0114144 20081117
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A light emitting device includes a gallium oxide based substrate, a gallium oxynitride based layer on the gallium oxide based substrate, a first conductivity-type semiconductor layer on the gallium oxynitride based layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer.
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