Invention Grant
- Patent Title: Vertical type power semiconductor device having a super junction structure
- Patent Title (中): 具有超结结构的垂直型功率半导体器件
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Application No.: US12620045Application Date: 2009-11-17
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Publication No.: US08125023B2Publication Date: 2012-02-28
- Inventor: Hiroshi Ohta , Wataru Saito , Syotaro Ono , Munehisa Yabuzaki , Nana Hatano , Miho Watanabe
- Applicant: Hiroshi Ohta , Wataru Saito , Syotaro Ono , Munehisa Yabuzaki , Nana Hatano , Miho Watanabe
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-296673 20081120
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
In a vertical power semiconductor device having the super junction structure both in a device section and a terminal section, an n-type impurity layer is formed on the outer peripheral surface in the super junction structure. This allows an electric field on the outer peripheral surface of the super junction structure region to be reduced. Accordingly, a reliable vertical power semiconductor device of a high withstand voltage can be provided.
Public/Granted literature
- US20100123186A1 POWER SEMICONDUCTOR DEVICE Public/Granted day:2010-05-20
Information query
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