Invention Grant
- Patent Title: Trench MOSgated device with deep trench between gate trenches
- Patent Title (中): 沟槽MOS沟槽器件在沟槽之间具有深沟槽
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Application No.: US12041017Application Date: 2008-03-03
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Publication No.: US08125024B2Publication Date: 2012-02-28
- Inventor: Milton J. Boden
- Applicant: Milton J. Boden
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A trench gated MOSFET especially for operation in high radiation environments has a deep auxiliary trench located between the gate trenches. A boron implant is formed in the walls of the deep trench (in an N channel device); a thick oxide is formed in the bottom of the trench, and boron doped polysilicon which is connected to the source electrode fills the trench. The structure has reduced capacitance and improved resistance to single event rupture and single event breakdown and improved resistance to parasitic bipolar action.
Public/Granted literature
- US20080211016A1 TRENCH MOSGATED DEVICE WITH DEEP TRENCH BETWEEN GATE TRENCHES Public/Granted day:2008-09-04
Information query
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