Invention Grant
US08125026B2 Gate of trench type MOSFET device and method for forming the gate
失效
沟槽型MOSFET器件的栅极和栅极的形成方法
- Patent Title: Gate of trench type MOSFET device and method for forming the gate
- Patent Title (中): 沟槽型MOSFET器件的栅极和栅极的形成方法
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Application No.: US12617810Application Date: 2009-11-13
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Publication No.: US08125026B2Publication Date: 2012-02-28
- Inventor: Ji-Houn Jung
- Applicant: Ji-Houn Jung
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2008-0124477 20081209
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336

Abstract:
A gate of a trench type MOSFET device and a method of forming a gate. A gate of a trench type MOSFET device may include a gate oxide film formed on and/or over a trench type gate poly such that parasitic capacitance may be produced in a gate poly. An electric field may be substantially uniformly formed in a MESA region surrounding a gate poly. An overcurrent may be substantially prevented from flowing into a MOS channel around a gate. A gate oxide film may be substantially prevented from being destroyed and/or leakage may be substantially prevented. Reliability of a device may be maximized.
Public/Granted literature
- US20100140690A1 GATE OF TRENCH TYPE MOSFET DEVICE AND METHOD FOR FORMING THE GATE Public/Granted day:2010-06-10
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