Invention Grant
- Patent Title: Polycrystalline silicon layer, flat panel display using the same, and method of fabricating the same
- Patent Title (中): 多晶硅层，使用其的平板显示器及其制造方法
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Application No.: US11636962Application Date: 2006-12-12
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Publication No.: US08125033B2Publication Date: 2012-02-28
- Inventor: Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
- Applicant: Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
- Applicant Address: KR Giheung-Gu, Yongin, Gyunggi-Do
- Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee Address: KR Giheung-Gu, Yongin, Gyunggi-Do
- Agent Robert E. Bushnell, Esq.
- Priority: KR10-2005-0122628 20051213
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A polycrystalline silicon layer, a flat panel display using the polycrystalline silicon layer, and a method of fabricating the same are provided. The polycrystalline silicon layer is formed by crystallizing a seed region of an amorphous silicon layer using a super grain silicon (SGS) crystallization technique. The crystallinity of the seed region spread into a crystallization region beyond the seed region. The crystallization region is formed into a semiconductor layer that can be incorporated to make a thin film transistor to drive flat panel displays. The semiconductor layer made by the method of the present invention provides uniform growth of grain boundaries, and characteristics of a thin film transistor made of the semiconductor layer are improved.
Public/Granted literature
- US20070131934A1 Polycrystalline silicon layer, flat panel display using the same, and method of fabricating the same Public/Granted day:2007-06-14
Information query
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