Invention Grant
- Patent Title: Nanolaminates of hafnium oxide and zirconium oxide
- Patent Title (中): 氧化铪和氧化锆的纳米层压板
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Application No.: US11178914Application Date: 2005-07-11
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Publication No.: US08125038B2Publication Date: 2012-02-28
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Kie Y. Ahn , Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A dielectric film containing a HfO2/ZrO2 nanolaminate and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. A dielectric layer containing a HfO2/ZrO2 nanolaminate may be realized in a wide variety of electronic devices and systems.
Public/Granted literature
- US20050277256A1 Nanolaminates of hafnium oxide and zirconium oxide Public/Granted day:2005-12-15
Information query
IPC分类:
