Invention Grant
US08125050B2 Semiconductor device having a mim capacitor and method of manufacturing the same
有权
具有mim电容器的半导体器件及其制造方法
- Patent Title: Semiconductor device having a mim capacitor and method of manufacturing the same
- Patent Title (中): 具有mim电容器的半导体器件及其制造方法
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Application No.: US12155229Application Date: 2008-05-30
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Publication No.: US08125050B2Publication Date: 2012-02-28
- Inventor: Satoshi Kageyama
- Applicant: Satoshi Kageyama
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, PC
- Priority: JP2007-145810 20070531
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
A semiconductor device is described includes a wiring layer, an insulating layer stacked on the wiring layer, a trench formed by digging down the insulating layer from the surface thereof, a film-shaped lower electrode formed along the inner surface of the trench, a capacitor film formed along the surface of the lower electrode, and an upper electrode opposed to the lower electrode with the capacitor film sandwiched therebetween.
Public/Granted literature
- US20090032953A1 Semiconductor device and method of manufacturing the same Public/Granted day:2009-02-05
Information query
IPC分类:
