Invention Grant
- Patent Title: Semiconductor power module
- Patent Title (中): 半导体电源模块
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Application No.: US12843934Application Date: 2010-07-27
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Publication No.: US08125090B2Publication Date: 2012-02-28
- Inventor: Tasao Soga , Daisuke Kawase , Kazuhiro Suzuki , Eiichi Morisaki , Katsuaki Saito , Hanae Shimokawa
- Applicant: Tasao Soga , Daisuke Kawase , Kazuhiro Suzuki , Eiichi Morisaki , Katsuaki Saito , Hanae Shimokawa
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2006-120028 20060425; JP2006-160421 20060609
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
Use of Pb-free solder has become essential due to the environmental problem. A power module is formed by soldering substrates with large areas. It is known that in Sn-3Ag-0.5Cu which hardly creeps and deforms with respect to large deformation followed by warpage of the substrate, life is significantly shortened with respect to the temperature cycle test, and the conventional module structure is in the situation having difficulty in securing high reliability. Thus, the present invention has an object to select compositions from which increase in life can be expected at a low strain rate. In Sn solder, by doping In by 3 to 7% and Ag by 2 to 4.5%, the effect of delaying crack development at a low strain rate is found out, and as a representative composition stable at a high temperature, Sn-3Ag-0.5Cu-5In is selected. Further, for enhancement of reliability, a method for partially coating a solder end portion with a resin is shown.
Public/Granted literature
- US20100289148A1 SEMICONDUCTOR POWER MODULE Public/Granted day:2010-11-18
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