Invention Grant
- Patent Title: Nano filament structure and methods of forming the same
- Patent Title (中): 纳米丝结构及其形成方法
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Application No.: US12487238Application Date: 2009-06-18
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Publication No.: US08125131B2Publication Date: 2012-02-28
- Inventor: Subramanya Mayya Kolake , In-Seok Yeo , Xiao Feng Wang
- Applicant: Subramanya Mayya Kolake , In-Seok Yeo , Xiao Feng Wang
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2008-0061773 20080627
- Main IPC: H01J9/02
- IPC: H01J9/02

Abstract:
Provided are a nano filament structure and a method of forming the nano filament structure. The nano filament structure includes a first layer disposed on a substrate, a second layer having a gap of nanometer size disposed on the first layer, a catalyst layer interposed between the first layer and the second layer, and a nano filament. One end of the nano filament is in contact with the catalyst layer and grows by penetrating the gap of the second layer.
Public/Granted literature
- US20090322200A1 Nano Filament Structure and Methods of Forming the Same Public/Granted day:2009-12-31
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