Invention Grant
US08125248B2 Semiconductor device, method of fabricating semiconductor device, and semiconductor device layout method
有权
半导体器件，制造半导体器件的方法和半导体器件布局方法
- Patent Title: Semiconductor device, method of fabricating semiconductor device, and semiconductor device layout method
- Patent Title (中): 半导体器件，制造半导体器件的方法和半导体器件布局方法
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Application No.: US12855858Application Date: 2010-08-13
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Publication No.: US08125248B2Publication Date: 2012-02-28
- Inventor: Hidekazu Noguchi
- Applicant: Hidekazu Noguchi
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Volentine &Whitt, PLLC
- Priority: JP2009-207991 20090909
- Main IPC: H01L25/00
- IPC: H01L25/00
Abstract:
There is provided a semiconductor device including: logic circuit elements disposed within a specific region in respective functional blocks of a logic circuit having a plurality of the functional blocks provided one for each functional unit; and a decoupling capacitor disposed in a region within each of the functional blocks at which no logic circuit element is disposed.
Public/Granted literature
- US20110057685A1 SEMICONDUCTOR DEVICE, METHOD OF FABRICATING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE LAYOUT METHOD Public/Granted day:2011-03-10
Information query
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