Invention Grant
US08125251B2 Semiconductor memory device having a clock alignment training circuit and method for operating the same 有权
具有时钟对准训练电路的半导体存储器件及其操作方法

  • Patent Title: Semiconductor memory device having a clock alignment training circuit and method for operating the same
  • Patent Title (中): 具有时钟对准训练电路的半导体存储器件及其操作方法
  • Application No.: US12630443
    Application Date: 2009-12-03
  • Publication No.: US08125251B2
    Publication Date: 2012-02-28
  • Inventor: Jung-Hoon Park
  • Applicant: Jung-Hoon Park
  • Applicant Address: KR Gyeonggi-do
  • Assignee: Hynix Semiconductor
  • Current Assignee: Hynix Semiconductor
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: IP & T Group LLP
  • Priority: KR10-2009-0082099 20090901
  • Main IPC: G11C8/18
  • IPC: G11C8/18 H03L7/00
Semiconductor memory device having a clock alignment training circuit and method for operating the same
Abstract:
A semiconductor device includes a clock input block to receive a system clock and a data clock, a clock frequency dividing block to generate a plurality of multi-phase data frequency division clocks each of which has the phase difference of a predetermined size by dividing a frequency of the data clock and to determine whether or not phases of the plurality of multi-phase data frequency division clocks are reversed in response to a frequency division control signal, and a first phase detecting block to detect a phase of the system clock based on a phase of a first selected clock that is predetermined among the plurality of multi-phase data frequency division clocks and to determine a logic level of the frequency division control signal in response to the detected result.
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