Invention Grant
US08125261B2 Multi-power source semiconductor device 有权
多功率源半导体器件

  • Patent Title: Multi-power source semiconductor device
  • Patent Title (中): 多功率源半导体器件
  • Application No.: US10565190
    Application Date: 2004-07-15
  • Publication No.: US08125261B2
    Publication Date: 2012-02-28
  • Inventor: Masahiro Nomura
  • Applicant: Masahiro Nomura
  • Applicant Address: JP Tokyo
  • Assignee: NEC Corporation
  • Current Assignee: NEC Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Sughrue Mion, PLLC
  • Priority: JP2003-277563 20030722
  • International Application: PCT/JP2004/010096 WO 20040715
  • International Announcement: WO2005/008777 WO 20050127
  • Main IPC: H03K3/00
  • IPC: H03K3/00
Multi-power source semiconductor device
Abstract:
In a multi-supply-voltage semiconductor device including multiple blocks each of which has independent clock circuit, and operating with variable power supply, variable delay circuit which changes the amount of delay in accordance with the voltage value of the variable power supply is provided to a clock signal supplied to several blocks from clock generator circuit. This can reduce clock skew between the blocks even when the power supply voltage of variable power supply is changed.
Public/Granted literature
Information query
Patent Agency Ranking
0/0