Invention Grant
US08125264B2 Voltage generation circuit and semiconductor memory using the same
有权
电压产生电路和使用其的半导体存储器
- Patent Title: Voltage generation circuit and semiconductor memory using the same
- Patent Title (中): 电压产生电路和使用其的半导体存储器
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Application No.: US13050186Application Date: 2011-03-17
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Publication No.: US08125264B2Publication Date: 2012-02-28
- Inventor: Hiroshi Maejima
- Applicant: Hiroshi Maejima
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-067453 20060313; JP2006-329123 20061206
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
The voltage generation circuit having a standard voltage generation circuit, a reference voltage, a minimum voltage setting circuit, and a voltage setting circuit that gradually sets voltage by switching a plurality of the gate transistors to switch a combination of resistive elements. The voltage generation circuit includes a differential amplifier that has one input terminal connected to the reference voltage generated by the standard voltage generation circuit and another input terminal connected to the minimum voltage setting circuit. The differential amplifier has an output node showing the result of a difference voltage of the inputs. The voltage generation circuit includes a pump control circuit that outputs a control signal controlling a charge-pump motion, based on the differential voltage, and a charge pump circuit that sets up and outputs the voltage by the control signal.
Public/Granted literature
- US20110163798A1 VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR MEMORY USING THE SAME Public/Granted day:2011-07-07
Information query
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