An electrostatic protection circuit includes a first terminal, a second terminal, an input circuit which includes a Metal Oxide Semiconductor (MOS) transistor including a gate, a source, and a drain, the gate as an input terminal being coupled to the first terminal, the source being coupled to the second terminal, an electrostatic protection element connected to the drain, the electrostatic protection element including a first electrostatic protection element, and a second electrostatic protection element connected between the first terminal and the second terminal.