Invention Grant
- Patent Title: Asymmetric write current compensation using gate overdrive for resistive sense memory cells
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Application No.: US13206749Application Date: 2011-08-10
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Publication No.: US08125819B2Publication Date: 2012-02-28
- Inventor: Yong Lu , Harry Hongyue Liu
- Applicant: Yong Lu , Harry Hongyue Liu
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Fellers, Snider, et al.
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
Apparatus and associated method for asymmetric write current compensation for resistive sense memory (RSM) cells, such as but not limited to spin-torque transfer random access memory (STRAM) or resistive random access memory (RRAM) cells. In accordance with some embodiments, an RSM cell includes an RSM element coupled to a switching device. The switching device has a plurality of terminals. A control circuit compensates for asymmetric write characteristics of the RSM cell by limiting a range of voltage differentials across the terminals so as to be equal to or less than a magnitude of a source voltage applied to the switching device, thereby providing bi-directional write currents of substantially equal magnitude through the RSM element.
Public/Granted literature
- US20110292716A1 Asymmetric Write Current Compensation Using Gate Overdrive for Resistive Sense Memory Cells Public/Granted day:2011-12-01
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