Invention Grant
- Patent Title: Method of operating phase-change memory
- Patent Title (中): 操作相变存储器的方法
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Application No.: US11756639Application Date: 2007-06-01
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Publication No.: US08125821B2Publication Date: 2012-02-28
- Inventor: Jan Otterstedt , Thomas Nirschl , Christian Peters , Michael Bollu , Wolf Allers , Michael Sommer
- Applicant: Jan Otterstedt , Thomas Nirschl , Christian Peters , Michael Bollu , Wolf Allers , Michael Sommer
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Infineon Technologies
- Agent Philip Schlazer
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
One or more embodiments are related to a method of operating a phase-change memory array, including: providing the phase-change memory array, the phase-change memory array including a phase-change memory element in series with an access device between a first address line and a power line; causing a first current through the memory element from the first address line to the power line; and causing a second current through the memory element from the power line to the first address line.
Public/Granted literature
- US20080298121A1 METHOD OF OPERATING PHASE-CHANGE MEMORY Public/Granted day:2008-12-04
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