Invention Grant
US08125821B2 Method of operating phase-change memory 有权
操作相变存储器的方法

Method of operating phase-change memory
Abstract:
One or more embodiments are related to a method of operating a phase-change memory array, including: providing the phase-change memory array, the phase-change memory array including a phase-change memory element in series with an access device between a first address line and a power line; causing a first current through the memory element from the first address line to the power line; and causing a second current through the memory element from the power line to the first address line.
Public/Granted literature
Information query
Patent Agency Ranking
0/0