Invention Grant
US08125825B2 Memory system protected from errors due to read disturbance and reading method thereof
有权
存储器系统由于读取干扰及其读取方法而被保护免于错误
- Patent Title: Memory system protected from errors due to read disturbance and reading method thereof
- Patent Title (中): 存储器系统由于读取干扰及其读取方法而被保护免于错误
-
Application No.: US12791077Application Date: 2010-06-01
-
Publication No.: US08125825B2Publication Date: 2012-02-28
- Inventor: Bong-Gwan Seol
- Applicant: Bong-Gwan Seol
- Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR2007-78262 20070803
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; G11C8/00
Abstract:
A method of reading a memory system including a flash memory includes: reading data from a page in a first block of the flash memory, incrementing a counter each time data is read from the page to store a corresponding number of read-out cycles of the flash memory, and copying data from the first block of the flash memory to a second block of the flash memory when the counter exceeds a reference number of read-out cycles. The data from the first block includes data from the page.
Public/Granted literature
- US20100241796A1 MEMORY SYSTEM PROTECTED FROM ERRORS DUE TO READ DISTURBANCE AND READING METHOD THEREOF Public/Granted day:2010-09-23
Information query
