Invention Grant
US08125832B2 Variable initial program voltage magnitude for non-volatile storage
有权
用于非易失性存储的可变初始编程电压幅度
- Patent Title: Variable initial program voltage magnitude for non-volatile storage
- Patent Title (中): 用于非易失性存储的可变初始编程电压幅度
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Application No.: US12482696Application Date: 2009-06-11
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Publication No.: US08125832B2Publication Date: 2012-02-28
- Inventor: Nima Mokhlesi
- Applicant: Nima Mokhlesi
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus & DeNiro LLP
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
Multiple programming processes are performed for a plurality of non-volatile storage elements. Each of the programming process operates to program at least a subset of said non-volatile storage elements to a set of target conditions using program pulses. In one embodiment, a first programming pass includes soft programming and additional programming passes include the programming of data. In another embodiment, all of the programming process includes programming data. For at least a subset of said programming processes, a program pulse associated with achieving a particular result for a respective programming process is identified. The identified program pulse is used to adjust programming for a subsequent programming process.
Public/Granted literature
- US20090244977A1 VARIABLE INITIAL PROGRAM VOLTAGE MAGNITUDE FOR NON-VOLATILE STORAGE Public/Granted day:2009-10-01
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