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US08126024B1 Optical device structure using GaN substrates and growth structures for laser applications of emissions of 500 nm and greater 有权
使用GaN衬底的光学器件结构和用于500nm及更大发射的激光应用的生长结构

  • Patent Title: Optical device structure using GaN substrates and growth structures for laser applications of emissions of 500 nm and greater
  • Patent Title (中): 使用GaN衬底的光学器件结构和用于500nm及更大发射的激光应用的生长结构
  • Application No.: US12762278
    Application Date: 2010-04-16
  • Publication No.: US08126024B1
    Publication Date: 2012-02-28
  • Inventor: James W. Raring
  • Applicant: James W. Raring
  • Applicant Address: US CA Goleta
  • Assignee: Soraa, Inc.
  • Current Assignee: Soraa, Inc.
  • Current Assignee Address: US CA Goleta
  • Main IPC: H01S5/00
  • IPC: H01S5/00
Optical device structure using GaN substrates and growth structures for laser applications of emissions of 500 nm and greater
Abstract:
An optical device having a structured active region configured for one or more selected wavelengths of light emissions of 500 nm and greater, but can be others.
Abstract(Chinese):

一种光学器件，其具有被配置用于500nm以上的发光的一个或多个所选波长的结构化有源区域，但可以是其它的。

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