Invention Grant
- Patent Title: Memory device including self-ID information
- Patent Title (中): 存储设备包括自我ID信息
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Application No.: US11845264Application Date: 2007-08-27
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Publication No.: US08127069B2Publication Date: 2012-02-28
- Inventor: Yong Bok An
- Applicant: Yong Bok An
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Ladas & Parry LLP
- Priority: KR2004-29602 20040428
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/06 ; G06F13/00 ; G06F13/28 ; G11C29/00 ; G11C7/00 ; G11C8/00 ; G11C8/18

Abstract:
Disclosed is a memory device including self-ID information. The memory device has a storage unit for storing information related to the memory device, such as a manufacturing factory, a manufacturing date, a wafer number, coordinates on a wafer and the like. Each bank of the memory device stores self-ID information related to the memory device and outputs the self-ID information out of a chip when an address is applied thereto during a test mode.
Public/Granted literature
- US20070294462A1 MEMORY DEVICE INCLUDING SELF-ID INFORMATION Public/Granted day:2007-12-20
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