Invention Grant
US08127617B2 Pressure sensor, manufacturing method thereof, and electronic component provided therewith
有权
压力传感器,其制造方法以及与其一起提供的电子部件
- Patent Title: Pressure sensor, manufacturing method thereof, and electronic component provided therewith
- Patent Title (中): 压力传感器,其制造方法以及与其一起提供的电子部件
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Application No.: US12426535Application Date: 2009-04-20
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Publication No.: US08127617B2Publication Date: 2012-03-06
- Inventor: Sinichi Murashige , Satoshi Yamamoto
- Applicant: Sinichi Murashige , Satoshi Yamamoto
- Applicant Address: JP Tokyo
- Assignee: Fujikura Ltd.
- Current Assignee: Fujikura Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2008-114263 20080424
- Main IPC: G01L7/08
- IPC: G01L7/08

Abstract:
A pressure sensor which includes: a semiconductor substrate; a first cavity portion that spreads out approximately parallel with one surface of the semiconductor substrate in the interior of a central region thereof; a diaphragm portion of a thin plate shape that is positioned on one side of the first cavity portion; a pressure sensitive element that is disposed on the diaphragm; and a bump that is disposed in an outer edge region of the one surface of the semiconductor substrate that excludes the diaphragm portion and is electrically connected with the pressure sensitive element, wherein a second cavity portion is disposed in at least one portion of the outer edge region in the interior of the semiconductor substrate and is closed with respect to the one surface of the semiconductor substrate.
Public/Granted literature
- US20090266170A1 PRESSURE SENSOR, MANUFACTURING METHOD THEREOF, AND ELECTRONIC COMPONENT PROVIDED THEREWITH Public/Granted day:2009-10-29
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