Invention Grant
US08127674B2 Stamp and fabricating method thereof, thin film transistor using the stamp, and liquid crystal display device having the thin film transistor
有权
印模及其制造方法，使用印模的薄膜晶体管，以及具有薄膜晶体管的液晶显示装置
- Patent Title: Stamp and fabricating method thereof, thin film transistor using the stamp, and liquid crystal display device having the thin film transistor
- Patent Title (中): 印模及其制造方法，使用印模的薄膜晶体管，以及具有薄膜晶体管的液晶显示装置
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Application No.: US11444182Application Date: 2006-05-31
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Publication No.: US08127674B2Publication Date: 2012-03-06
- Inventor: Bo Hyun Lee , Gee Sung Chae
- Applicant: Bo Hyun Lee , Gee Sung Chae
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Brinks Hofer Gilson & Lione
- Priority: KR10-2005-0108334 20051114
- Main IPC: B41L47/02
- IPC: B41L47/02
Abstract:
Provided are a method of fabricating a stamp, a thin film transistor and a liquid crystal display device using the same. The stamp has an improved contact property with respect to a substrate. A charged zone is formed on the substrate using the stamp, and nano material charged with opposite charges to those of the charged zone is coated or plated to form a self-assembled monolayer (SAM). Therefore, the thin film transistor and the liquid crystal display device can have precise nano patterns, thereby improving the performance of the device.
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