Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12230286Application Date: 2008-08-27
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Publication No.: US08127998B2Publication Date: 2012-03-06
- Inventor: Munehiro Kozuma , Yoshiyuki Kurokawa
- Applicant: Munehiro Kozuma , Yoshiyuki Kurokawa
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-223644 20070830
- Main IPC: G06K19/06
- IPC: G06K19/06

Abstract:
A semiconductor device is provided, which includes an antenna, a first circuit (a boosting circuit), a second circuit (a reference voltage supply circuit), and a third circuit (a voltage comparison circuit). The first circuit is electrically connected to the antenna, and includes at least a first charge pump, a second charge pump, and a first switch disposed between the first charge pump and the second charge pump. The second circuit is configured to generate a reference voltage in accordance with a first output voltage supplied from the first charge pump. The third circuit is configured to compare the reference voltage, the first output voltage, and a second output voltage supplied from the second charge pump.
Public/Granted literature
- US20090057418A1 Semiconductor device Public/Granted day:2009-03-05
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