Invention Grant
- Patent Title: Apparatus and method for electroless deposition of materials on semiconductor substrates
- Patent Title (中): 在半导体衬底上无电沉积材料的装置和方法
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Application No.: US11138531Application Date: 2005-05-26
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Publication No.: US08128987B2Publication Date: 2012-03-06
- Inventor: Igor C. Ivanov , Jonathan Weiguo Zhang , Artur Kolics
- Applicant: Igor C. Ivanov , Jonathan Weiguo Zhang , Artur Kolics
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corp.
- Current Assignee: Lam Research Corp.
- Current Assignee Address: US CA Fremont
- Agency: Daffer McDaniel, LLP
- Agent Kevin L. Daffer; Mollie E. Lettang
- Main IPC: C23C18/16
- IPC: C23C18/16

Abstract:
A method for electroless deposition from a deposition solution in a working chamber, where the process can include heating the deposition solution to its boiling point and subsequently reducing the temperature of the deposition solution to a working temperature range that is between approximately 1% and approximately 25% below the boiling point of said solution under a predetermined pressure; and the process also can include heating the deposition solution while filling an enclosed area of the chamber such that the deposition solution reaches its boiling point immediately after the enclosed area is filled.
Public/Granted literature
- US20050221015A1 Apparatus and method for electroless deposition of materials on semiconductor substrates Public/Granted day:2005-10-06
Information query
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