Invention Grant
- Patent Title: Prevention of photoresist scumming
- Patent Title (中): 防止光刻胶浮渣
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Application No.: US12761151Application Date: 2010-04-15
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Publication No.: US08129093B2Publication Date: 2012-03-06
- Inventor: Zhiping Yin , Jingyi Bai
- Applicant: Zhiping Yin , Jingyi Bai
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: G03F7/26
- IPC: G03F7/26

Abstract:
A photo acid generator (PAG) or an acid is used to reduce resist scumming and footing. Diffusion of acid from photoresist into neighbors causes a decreased acid level, and thus causes resist scumming. An increased acid layer beneath the resist prevents acid diffusion. In one embodiment, the increased acid layer is a layer of spun-on acid or PAG dissolved in aqueous solution. In another embodiment, the increased acid layer is a hard mask material with a PAG or an acid mixed into the material. The high acid content inhibits the diffusion of acid from the photoresist into neighboring layers, and thus substantially reduces photoresist scumming and footing.
Public/Granted literature
- US20100196807A1 PREVENTION OF PHOTORESIST SCUMMING Public/Granted day:2010-08-05
Information query
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