Invention Grant
- Patent Title: Nonvolatile ferroelectric memory device and method for manufacturing the same
- Patent Title (中): 非易失性铁电存储器件及其制造方法
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Application No.: US12905706Application Date: 2010-10-15
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Publication No.: US08129200B2Publication Date: 2012-03-06
- Inventor: Hee Bok Kang
- Applicant: Hee Bok Kang
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2005-0015662 20060217; KR10-2006-0015659 20060217
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/8234 ; H01L21/8242 ; H01L21/20
Abstract:
A nonvolatile ferroelectric memory device includes a plurality of unit cells. Each of the unit cells includes a cell capacitor and a cell transistor. The cell capacitor includes a storage node, a ferroelectric layer, and a plate line. The cell capacitors of more than one of the plurality of unit cells are provided in a trench.
Public/Granted literature
- US20110033955A1 NONVOLATILE FERROELECTRIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-02-10
Information query
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